1 dual igbtmod u-series module 800 amperes / 600 v olts cm800du-12h p o were x, inc., 200 hillis street, y oungw ood, p ennsylv ania 15697-1800 (724) 925-7272 outline drawing and circuit diagram 1 dimensions inches millimeters a 5.12 130.0 b 5.12 130.0 c 1.38 35.0 d 0.96 24.5 e 4.33 110.0 f 0.39 10.0 g 0.39 10.0 h 0.8 1 20. 5 j 0.53 14.5 dimensions inches millimeters k 1. 5 7 4 0 .0 l 1.42 36.0 m 1.72 43.8 n 0.54 13.8 p 0.45 11.5 q 5.51 140.0 r 0.2 6 d ia . 6.5 dia. sm8 m8 tm4 m4 description: powerex igbtmod modules are designed for use in switching applications. each module consists of two igbt transistors in a half- bridge configuration with each tran- sistor having a reverse-connected super-fast recovery free-wheel diode. all components and inter- connects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. features: low drive power low v ce(sat) discrete super-fast recovery f ree-wheel diode isolated baseplate for easy heat sinking applications: ac motor control motion/servo control ups welding power supplies laser power supplies ordering information: example: select the complete module number you desire from the table - i.e. cm800du-12h is a 600v (v ces ), 800 ampere dual igbtmod power module. current rating v ces type amperes volts (x 50) cm 800 12 c2e1 e2 g1 c1 e1 e2 g2 c2e1 e2 c1 g2e2e1g1 a b e e j k j f q d c n p m l h g "r" (4 places) "s" (3 places) "t" (4 places)
2 cm800du-12h dual igbtmod u-series module 800 amperes / 600 v olts p o were x, inc., 200 hillis street, y oungw ood, p ennsylv ania 15697-1800 (724) 925-7272 absolute maximum ratings, t j = 25 c unless otherwise specified ratings symbol cm800du-12h units junction temperature t j -40 to 150 c storage temperature t stg -40 to 125 c collector-emitter voltage (g-e short) v ces 600 volts gate-emitter voltage (c-e short) v ges 20 volts collector current (t c = 25 c) i c 800 amperes peak collector current i cm 1600* amperes emitter current** (t c = 25 c) i e 800 amperes peak emitter current** i em 1600* amperes maximum collector dissipation (t c = 2 5 c, t j 15 0 c) p c 1 5 00 w atts mounting t orqu e , m8 main t e r minal 95 in-lb mounting t orqu e , m6 mounting 40 in-lb g(e) t e r minal, m4 15 in-lb w eight 1 2 0 0 g r ams isolation v oltage (main t e r minal to baseplat e , a c 1 min.) v iso 2500 v olts * pulse width and repetition r ate should be such that the d e vice junction tempe r ature (t j ) does not e xceed t j(max) rating. **represents characte r istics of the anti-pa r allel, emitter-to-collector free-wheel diode (fwdi). static electrical characteristics, t j = 25 c unless othe r wise specified characteristics symbol t est conditions min. t yp. max. units collector-cutoff current i ces v ce = v ces , v ge = 0v 2ma gate leakage voltage i ges v ge = v g e s , v ce = 0v 0.5 a gate-emitter threshold voltage v ge(th) i c = 80ma, v ce = 10v 4.5 6 7.5 volts collector-emitter saturation voltage v ce(sat) i c = 800a, v ge = 15 v , t j = 2 5 c 2. 5 5 3.15 v olts i c = 800a, v ge = 15 v , t j = 12 5 c 2. 7 5 v olts total gate charge q g v cc = 300 v , i c = 800a, v ge = 15v 1600 nc emitter-collector voltage** v ec i e = 800a, v ge = 0v 2.6 volts **represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (fwdi). dynamic electrical characteristics, t j = 25 c unless otherwise specified characteristics symbol test conditions min. typ. max. units input capacitance c ies 70.4 nf output capacitance c oes v ce = 10v, v ge = 0v 38.4 nf reverse transfer capacitance c res 10.4 nf resistive turn-on delay time t d(on) v cc = 300 v , i c = 800a, ? ? 4 0 0 ns load rise time t r v ge1 = v ge2 = 15 v , 2 0 0 0 ns switch t u r n-off del a y time t d(off) r g = 3 . 1 , resisti v e 5 0 0 n s times f all time t f load switching ope r ation 3 00 ns diode reverse recovery time** t rr i e = 800a, di e /dt = -1600a / s 160 ns diode reverse recovery charge** q rr i e = 800a, di e /dt = -1600a / s 1.92 c **represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (fwdi). thermal and mechanical characteristics, t j = 25 c unless otherwise specified characteristics symbol test conditions min. typ. max. units thermal resistance, junction to case r th(j-c ) q p er igbt 1/2 module 0.0 8 3 c/w the r mal resistanc e , junction to case r th(j-c ) r p er fwdi 1/2 module 0. 1 3 c/w contact the r mal resistance r th(c-f) p er modul e , the r mal grease applied 0.01 0 c/w 2
3 cm800du-12h dual igbtmod u-series module 800 amperes/600 volts powerex, inc., 200 hillis street, youngwood, pennsylvania 15697-1800 (724) 925-7272 3 collector-emitter voltage, v ce , (volts) collector current, i c , (amperes) output characteristics (typical) 0246810 1200 400 0 v ge = 20v 14 15 20 12 13 11 8 t j = 25 o c 800 1600 10 9 gate-emitter voltage, v ge , (volts) collector current, i c , (amperes) transfer characteristics (typical) 048121620 1600 1200 800 400 0 v ce = 10v t j = 25 c t j = 125 c collector-current, i c , (amperes) collector-emitter saturation voltage, v ce(sat) , (volts ) collector-emitter saturation voltage characteristics (typical) 5 0 400 800 1200 1600 4 3 2 1 0 v ge = 15v t j = 25 c t j = 125 c gate-emitter voltage, v ge , (volts) collector-emitter saturation voltage, v ce(sat) , (volts) collector-emitter saturation voltage characteristics (typical) 10 048121620 8 6 4 2 0 t j = 25 c i c = 320a i c = 1600a i c = 800a .5 1.0 1.5 2.0 3.0 2.5 10 1 10 2 10 3 emitter-collector voltage, v ec , (volts) free-wheel diode forward characteristics (typical) 10 4 emitter current, i e , (amperes) t j = 25 c collector-emitter voltage, v ce , (volts) capacitance, c ies , c oes , c res , (nf) capacitance vs. v ce (typical) 10 -1 10 0 10 2 10 2 10 1 10 0 10 -1 v ge = 0v f = 1mhz 10 1 c oes c res c ies collector current, i c , (amperes) 10 3 10 1 10 2 10 3 10 2 10 1 t d(off) t d(on) t r v cc = 300v v ge = 15v r g = 0.78 ? t j = 125 c t f switching time, (ns) half-bridge switching characteristics (typical) emitter current, i e , (amperes) reverse recovery time, t rr , (ns) reverse recovery characteristics (typical) 10 3 10 1 10 2 10 3 10 2 10 1 t rr i rr di/dt = -1600a/ sec t j = 25 c 10 2 10 1 10 0 reverse recovery current, i rr , (amperes) gate charge, q g , (nc) gate-emitter voltage, v ge , (volts) gate charge, v ge 20 0 500 1500 1000 16 12 8 4 0 2500 2000 v cc = 300v v cc = 200v i c = 400a
4 cm800du-12h dual igbtmod u-series module 800 amperes/600 volts powerex, inc., 200 hillis street, youngwood, pennsylvania 15697-1800 (724) 925-7272 4 time, (s) normalized transient thermal impedance, z th(j-c) transient thermal impedance characteristics (igbt) 10 1 10 -5 10 -4 10 -3 10 0 10 -1 10 -2 10 -3 10 -3 10 -2 10 -1 10 0 10 1 single pulse t c = 25 c per unit base = r th(j-c) = 0.06 c/w z th = r th ?(normalized value) 10 -1 10 -2 10 -3 time, (s) normalized transient thermal impedance, z th(j-c) transient thermal impedance characteristics (fwdi) 10 1 10 -5 10 -4 10 -3 10 0 10 -1 10 -2 10 -3 10 -3 10 -2 10 -1 10 0 10 1 single pulse t c = 25 c per unit base = r th(j-c) = 0.09 c/w z th = r th ?(normalized value) 10 -1 10 -2 10 -3
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